sot223 pnp silicon planar high voltage transistor issue 3 - november 1995 j complementary to fzt493 partmarking detail - FZT593 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -120 v collector-emitter voltage v ceo -100 v emitter-base voltage v ebo -5 v peak pulse current i cm -2 a continuous collector current i c -1 a base current i b -200 ma power dissipation at t amb =25c p tot 2w operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. max. unit conditions. breakdown voltages v (br)cbo -120 v i c =-100 m a v (br)ceo -100 v i c =-10ma* v (br)ebo -5 v i e =-100 m a collector cut-off current i cbo -100 na v cb =-100v emitter cut-off current i ebo -100 na v eb =-4v collector-emitter cut-off current i ces -100 na v ces =-100v saturation voltages v ce(sat) -0.2 -0.3 v v i c =-250ma,i b =-25ma* i c =-500ma i b =-50ma* v be(sat) -1.1 v i c =-500ma,i b =-50ma* base-emitter turn-on voltage v be(on) -1.0 v i c =-1ma, v ce =-5v* static forward current transfer ratio h fe 100 100 100 50 300 i c =-1ma, v ce =-5v i c =-250ma,v ce =-5v* i c =-500ma, v ce =-5v* i c =-1a, v ce =-5v* transition frequency f t 50 mhz i c =-50ma, v ce =-10v f=100mhz output capacitance c obo 5pfv cb =-10v, f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% for typical characteristics graphs see fmmt593 datasheet FZT593 3 - 196 c c e b
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